Title :
Dynamic spectral width of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation
Author :
Suzuki, M. ; Noda, Y. ; Kushiro, Y. ; Akiba, S.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
The first measurements of dynamic spectra of an InGaAsP/InP electroabsorption light modulator under high-frequency large-signal modulation are reported. A spectral broadening factor ¿ was determined from the relative sideband strength to the carrier, and it decreased with increasing operating electric field in the modulator. The estimated ¿-value for full modulation was |¿| = 2.3, which can be reduced by designing a modulator to give a more effective change of electro-absorption.
Keywords :
electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; spectral analysis; InGaAsP/InP; carrier; dynamic spectra; electroabsorption light modulator; large-signal modulation; sideband; spectral broadening factor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860214
