DocumentCode
1021307
Title
Analysis of microwave characteristics of coplanar traveling wave electrodes on III-V semiconductor with an n+ doped layer
Author
Wu, Zhiwu ; Takahashi, Yoshihiro ; Wang, Minghua ; Tada, Kunio
Author_Institution
Dept. of Electron. Eng., Tokyo Univ., Japan
Volume
13
Issue
10
fYear
1995
fDate
10/1/1995 12:00:00 AM
Firstpage
2075
Lastpage
2081
Abstract
The microwave characteristics of coplanar traveling wave electrodes on III-V semiconductor with an n+ doped layer have been studied by using the method of lines. Such a structure is analyzed by using even mode and odd mode of microwave. The behaviors of n+ doped layer have been studied carefully and found that at certain doping concentration region the n+ doped layer behaves like a perfect conductor for electric field and like an insulator for magnetic field. The relations between microwave characteristics of the odd mode and structural dimensions of the modulator have been analyzed in order to find a low loss and velocity-matched structure. A bandwidth as large as 37 GHz is predicted for the traveling wave type directional coupler modulator
Keywords
coplanar waveguides; electric fields; electro-optical modulation; electrodes; magnetic fields; optical directional couplers; optical losses; optical planar waveguides; optical waveguide theory; 37 GHz; III-V semiconductor; coplanar traveling wave electrodes; doping concentration region; electric field; even mode; insulator; low loss; magnetic field; method of lines; microwave characteristics; n+ doped layer; odd mode; perfect conductor; structural dimensions; traveling wave type directional coupler modulator; velocity-matched structure; Bandwidth; Conductors; Dielectrics and electrical insulation; Directional couplers; Doping; Electrodes; III-V semiconductor materials; Magnetic analysis; Magnetic fields; Microwave theory and techniques;
fLanguage
English
Journal_Title
Lightwave Technology, Journal of
Publisher
ieee
ISSN
0733-8724
Type
jour
DOI
10.1109/50.469725
Filename
469725
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