• DocumentCode
    1021320
  • Title

    Collector-top GaAs/AlGaAs heterojunction bipolar transistors for high-speed digital ICs

  • Author

    Morizuka, K. ; Nozu, T. ; Tsuda, K. ; Azuma, M.

  • Author_Institution
    Toshiba Corporation, Research & Development Center, Kawasaki, Japan
  • Volume
    22
  • Issue
    6
  • fYear
    1986
  • Firstpage
    315
  • Lastpage
    316
  • Abstract
    GaAs/AlGaAs collector-top heterojunction bipolar transistors with magnesium and phosphorus double-implanted external bases were fabricated. A cutoff frequency of 17 GHz and a gate delay time of 63 ps for DCTL were obtained. These results indicate the potential of collector-top HBTs for high-speed ICs.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar integrated circuits; bipolar transistors; digital integrated circuits; gallium arsenide; integrated circuit technology; 17 GHz; DCTL; GaAs/AlGaAs; HBT; Mg implantation; P implantation; collector-top heterojunction bipolar transistors; cutoff frequency; digital ICs; gate delay time; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860216
  • Filename
    4256407
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021320