Switching and signal characteristics of a zigzag-shaped crosstie RAM cell

Test results on a zigzag-shaped crosstie random access memory (CRAM) cell are reported. This cell design offers several advantages for device applications over the "arrowhead" designs previously reported. For a 12 μm period cell, the switching field is largely insensitive to Permalloy thickness and temperature, and signals on the order of 1 mV are attainable over a temperature range of ±200°C. These and other characteristics make the zigzag-design CRAM attractive for very large-scale integrated (VLSI) densities.