DocumentCode
1021390
Title
Measurement of a very high-speed InGaAs photodiode using electro-optic sampling
Author
Taylor, Antoinette J. ; Wiesenfeld, J.M. ; Tucker, Rodney ; Eisenstein, Gadi ; Talman, J.R. ; Koren, U.
Author_Institution
AT&T Bell Laboratories, Crawford Hill Laboratory, Holmdel, USA
Volume
22
Issue
6
fYear
1986
Firstpage
325
Lastpage
327
Abstract
We demonstrate an eleclro-optic sampling system for the characterisation of very high-speed, long-wavelength photodetectors. The system uses a mode-locked InGaAsP injection laser operating at 1.3 ¿m as the source of pump and sampling pulses.
Keywords
III-V semiconductors; electro-optical effects; gallium arsenide; indium compounds; measurement by laser beam; optical communication equipment; photodetectors; photodiodes; semiconductor device testing; 1.3 micron wavelength; III-V semiconductors; InGaAs photodiode; InGaAsP injection laser; electro-optic sampling; long-wavelength photodetectors; mode-locked semiconductor lasers; optical communication equipment; pump source; response measurement; sampling pulse source; testing; very high-speed photodiodes;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860223
Filename
4256414
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