Title :
Deep donor trapping effects on the pulsed characteristics of AlGaAs/GaAs HEMTs
Author :
Hofmann, Karl Rudiger ; Kohn, Erhard
Author_Institution :
Siemens Research & Technology Laboratories, E. Princeton, USA
Abstract :
It is demonstrated both by experiments and by numerical model calculations that electron capture/emission on deep Si related donors (`DX centres¿) in the AlGaAs can lead to significant changes of the pulsed transfer characteristic of AlGaAs/GaAs high electron mobility transistors (HEMTs) at room temperature compared with the static case.
Keywords :
III-V semiconductors; aluminium compounds; deep levels; electron traps; gallium arsenide; high electron mobility transistors; impurity electron states; AlGaAs/GaAs; DX centres; HEMTs; III-V semiconductors; deep Si related donors; deep donor trapping effects; electron capture/emission; high electron mobility transistors; impurity electron states; model calculations; pulsed transfer characteristic; room temperature;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860230
