Title :
High-speed high-resolution CMOS voltage comparator
Author :
Ng, W.T. ; Salama, C.A.T.
Author_Institution :
University of Toronto, Department of Electrical Engineering, Toronto, Canada
Abstract :
A new CMOS voltage comparator circuit capable of resolving 300 ¿V has been designed and implemented using a 5 ¿m CMOS process. Differential signal paths are used to eliminate the residual offset voltage caused by clock feedthrough and the channel charge pumping effect in MOS switches. The regenerative action of the output latch is used to provide high voltage gain and high operating speed. The circuit performance does not depend on any critical device geometries, and consequently the circuit is scalable. If a finer geometry CMOS process were used, still higher resolution and faster operating speed could be expected.
Keywords :
CMOS integrated circuits; comparators (circuits); linear integrated circuits; 5 micron process; CMOS voltage comparator; MOS switches; channel charge pumping effect; clock feedthrough; differential signal paths; high operating speed; high voltage gain; high-resolution; linear IC; offset elimination; output latch; regenerative action; residual offset voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860232