• DocumentCode
    1021530
  • Title

    Common emitter breakdown

  • Author

    Morrison, S. Roy ; Billette, R.

  • Author_Institution
    Honeywell Research Center, Hopkins, Minn.
  • Volume
    10
  • Issue
    6
  • fYear
    1963
  • fDate
    11/1/1963 12:00:00 AM
  • Firstpage
    351
  • Lastpage
    356
  • Abstract
    A theory of the current-voltage characteristics with grounded emitter and open base is developed in a first approximation form. The results show the typical negative resistance region characteristic of these I-V curves, and the theory indicates the important parameters which control this negative resistance. The containment of the emitter current with subsequent development of "hot spots" on the transistor becomes easily understood. Experimental evidence of the importance of localized breakdown spots in common emitter breakdown is presented.
  • Keywords
    Avalanche breakdown; Capacitance; Current-voltage characteristics; Electric breakdown; Electrons; Packaging; Pins; Sockets; Spontaneous emission; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/T-ED.1963.15258
  • Filename
    1473561
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021530