Title :
High-speed characteristics of tunnelling injection and excited-state emitting InAs/GaAs quantum dot lasers
Author :
Qasaimeh, O. ; Khanfar, H.
Author_Institution :
Dept. of Electr. Eng., Jordan Univ. of Sci. & Technol., Irbid, Jordan
fDate :
6/28/2004 12:00:00 AM
Abstract :
A detailed theoretical analysis of the high-speed characteristics of InAs/GaAs quantum dot lasers is presented. The modulation bandwidth, relative intensity noise (RIN) and induced carrier concentration chirp of a tunnelling injection laser and excited-state emitting DBR laser have been studied and compared with a conventional laser and cross-gain modulated laser. The study shows that the excited-state emitting DBR laser demonstrates higher modulation bandwidth and lower induced carrier concentration chirp than the tunnelling injection laser.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; optical modulation; quantum dot lasers; InAs-GaAs; InAs/GaAs quantum dot lasers; cross-gain modulated laser; excited-state emitting DBR laser; excited-state emitting quantum dot lasers; high-speed characteristics; induced carrier concentration chirp; modulation bandwidth; relative intensity noise; tunnelling injection; tunnelling injection laser;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20040392
