• DocumentCode
    1021622
  • Title

    Large-hole diffusion length and lifetime in InGaAs/InP double-heterostructure photodiodes

  • Author

    Trommer, Ralph ; Hoffmann, Lionel

  • Author_Institution
    Siemens AG, Research Laboratories, Mÿnchen, West Germany
  • Volume
    22
  • Issue
    7
  • fYear
    1986
  • Firstpage
    360
  • Lastpage
    362
  • Abstract
    In planar InGaAs/InP PIN photodiodes the minority-hole diffusion length and lifetime have been evaluated from measurements of the response to peripheral steady-state or pulse illumination. Very large values up to 74 ¿m and of 6 ¿s have been obtained for low-doped InGaAs. This high material quality could be revealed because surface effects are avoided in the utilised double heterostructures.
  • Keywords
    III-V semiconductors; carrier lifetime; gallium arsenide; indium compounds; photodiodes; DH photodiodes; InGaAs/InP double-heterostructure photodiodes; lifetime; low-doped InGaAs; material quality; minority-hole diffusion length; planar InGaAs/InP PIN photodiodes; pulse illumination; semiconductors; surface effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860245
  • Filename
    4256437
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021622