Title :
Approximate analytical model for the poly-silicon thin film transistor
Author :
Izzard, M.J. ; Migliorato, Piero ; Milne, W.I.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
A set of analytical equations that accurately model the large-signal current-voltage and charge-storage characteristics of the poly-silicon thin film transistor (TFT) has been developed. The model is based on theories of conduction in materials with an exponential distribution of states in the gap. The equations are suitable for incorporation into a circuit simulator capable of transient analysis of circuits, such as SPICE.
Keywords :
semiconductor device models; silicon; thin film transistors; I/V characteristics; Q/V characteristics; SPICE; approximate analytical model; charge-storage characteristics; exponential distribution of states; large signal model current voltage characteristics; model; polycrystalline Si; polysilicon TFT; set of analytical equations; theories of conduction; thin film transistor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900826
