DocumentCode
1021628
Title
Approximate analytical model for the poly-silicon thin film transistor
Author
Izzard, M.J. ; Migliorato, Piero ; Milne, W.I.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
26
Issue
16
fYear
1990
Firstpage
1284
Lastpage
1286
Abstract
A set of analytical equations that accurately model the large-signal current-voltage and charge-storage characteristics of the poly-silicon thin film transistor (TFT) has been developed. The model is based on theories of conduction in materials with an exponential distribution of states in the gap. The equations are suitable for incorporation into a circuit simulator capable of transient analysis of circuits, such as SPICE.
Keywords
semiconductor device models; silicon; thin film transistors; I/V characteristics; Q/V characteristics; SPICE; approximate analytical model; charge-storage characteristics; exponential distribution of states; large signal model current voltage characteristics; model; polycrystalline Si; polysilicon TFT; set of analytical equations; theories of conduction; thin film transistor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19900826
Filename
130936
Link To Document