• DocumentCode
    1021636
  • Title

    Anisotropic electron cyclotron resonance etching of tungsten films on GaAs

  • Author

    Shul, R.J. ; Rieger, D.J. ; Baca, A.G. ; Constantine, C. ; Barratt, C.

  • Author_Institution
    Sandia Nat. Labs., Albuquerque, NM, USA
  • Volume
    30
  • Issue
    1
  • fYear
    1994
  • fDate
    1/6/1994 12:00:00 AM
  • Firstpage
    84
  • Lastpage
    85
  • Abstract
    Anisotropic etching of tungsten submicrometre features has been achieved with an electron-cyclotron-resonance-generated SF6/Ar plasma. The process is suitable for W Schottky gates for highspeed, high-power GaAs transistors. Tungsten gate sidewall profiles are evaluated as a function of RF bias
  • Keywords
    Schottky gate field effect transistors; electrical contacts; gallium arsenide; metallic thin films; metallisation; semiconductor technology; sputter etching; tungsten; Ar; RF bias; SF6; SF6-Ar; SF6/Ar plasma; W; W Schottky gates; W gate sidewall profiles; W-GaAs; anisotropic etching; electron cyclotron resonance etching; high-power GaAs transistors; high-speed devices; submicrometre features;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940006
  • Filename
    260619
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021636