• DocumentCode
    1021661
  • Title

    High-performance buried-gate MOSFETs with RTO-grown ultrathin gate oxide films

  • Author

    Ochiai, Toshihiko ; Fukuda, Hiroshi ; Hayashi, Teruaki ; Iwabuchi, T.

  • Author_Institution
    Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo
  • Volume
    30
  • Issue
    1
  • fYear
    1994
  • fDate
    1/6/1994 12:00:00 AM
  • Firstpage
    87
  • Lastpage
    89
  • Abstract
    The authors propose a novel buried-gate-type MOSFET (BG-MOSFET) with ultrathin gate oxide films formed by rapid thermal oxidation (RTO) technology. The BG-MOSFET fabricated showed good punchthrough characteristics and much smaller hot-carrier degradation. The optimum trench depth is ~0.1-0.2μm deeper than source/drain junction depth considering current gain, avalanche breakdown voltage and hot-carrier immunity
  • Keywords
    hot carriers; impact ionisation; insulated gate field effect transistors; oxidation; rapid thermal processing; RTO-grown films; avalanche breakdown voltage; buried-gate MOSFETs; current gain; hot-carrier degradation; hot-carrier immunity; optimum trench depth; punchthrough characteristics; rapid thermal oxidation; ultrathin gate oxide films;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19940031
  • Filename
    260621
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1021661