Title :
State holding circuit using heterojunction bipolar transistors and resonant tunnelling diodes
Author :
Yang, Y.F. ; Wang, W.I. ; Yang, E.S.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY
fDate :
1/6/1994 12:00:00 AM
Abstract :
A state holding circuit, similar to the Muller C-element used as a latch, a register or a counter, has been successfully fabricated using GaAs-AlGaAs heterostructures grown by molecular beam epitaxy (MBE). Using the negative resistance in a resonant tunnel diode, the circuit has a simpler configuration than the C-element and a potential for use in high speed circuits
Keywords :
heterojunction bipolar transistors; integrated logic circuits; negative resistance; resonant tunnelling devices; tunnel diodes; GaAs-AlGaAs; GaAs-AlGaAs heterostructures; HBT; MBE; Muller C-element; RTD; counter; heterojunction bipolar transistors; high speed circuits; latch; molecular beam epitaxy; negative resistance; register; resonant tunnelling diodes; state holding circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19940008
