Title :
A large-signal physical MESFET model for computer-aided design and its applications
Author :
Pantoja, Renato R. ; Howes, Michael J. ; Richardson, John R. ; Snowden, Christopher M.
Author_Institution :
Dept. of Electr. & Electron. Eng., Leeds Univ., UK
fDate :
12/1/1989 12:00:00 AM
Abstract :
A quasi-static, large-signal MESFET circuit model is presented. It is based on a comprehensive quasi-two-dimensional, semiclassical, physical device simulation, and its unique formulation and efficiency make it suitable for the computer-aided design of nonlinear MESFET subsystems. Using this approach the semiconductor equations are reduced to a consistent one-dimensional approximation requiring substantially less computing resources than a full two-dimensional simulation. CPU time is typically reduced by a factor of 1000. A single/two-tone harmonic balance analysis procedure which uses the describing frequency concept is also developed and combined with the MESFET model. Numerical load-pull contours as well as intermodulation distortion contours have been simulated; their comparison with measured results validates the approach taken
Keywords :
Schottky gate field effect transistors; circuit CAD; semiconductor device models; computer-aided design; computing resources; harmonic balance analysis; intermodulation distortion contours; large-signal physical MESFET model; load-pull contours; nonlinear MESFET subsystems; physical device simulation; Circuit simulation; Computational modeling; Computer simulation; Design automation; Distortion measurement; Frequency; Harmonic analysis; Intermodulation distortion; MESFET circuits; Nonlinear equations;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
