Title :
Analysis of gate oxide shorts in CMOS circuits
Author :
Hao, Hong ; McCluskey, Edward J.
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., CA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The resistance dependence, voltage dependence, temperature dependence, and pattern dependence properties of CMOS logic gate operation in the presence of gate oxide shorts are analyzed. The analysis is based on realistic defect models that incorporate the resistive nature of gate oxide shorts and the difference between gate oxide shorts in n- and p-channel transistors
Keywords :
CMOS integrated circuits; integrated logic circuits; logic gates; semiconductor device models; CMOS circuits; defect models; gate oxide shorts; logic gate operation; n-channel transistors; p-channel transistors; pattern dependence; resistance dependence; temperature dependence; voltage dependence; CMOS logic circuits; Circuit optimization; Computer science; Data structures; IEEE Press; Laboratories; Pattern analysis; Semiconductor device modeling; Very large scale integration; Wire;
Journal_Title :
Computers, IEEE Transactions on
