Title :
Reliable 1.3 mu m gain guided stripe lasers grown by MOCVD using ethyldimethylindium as the In source
Author :
Blaauw, C. ; Devenyi, T.F. ; Capron, B. ; Shepherd, F.R. ; SpringThorpe, A.J.
Author_Institution :
Bell-Northern Res. Ltd., Ottawa, Ont., Canada
Abstract :
The first semiconductor laser in the GaInAsP materials system grown by MOCVD using ethyldimethylindium as the In source is reported. A 1.3 mu m gain guided stripe laser structure with 5 mu m wide stripes was fabricated. The devices showed excellent reliability, with negligible degradation measured during life testing at 50 degrees C and 60 degrees C over a period of 16000 h.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; life testing; reliability; semiconductor junction lasers; vapour phase epitaxial growth; 1.3 micron; 16000 h; 5 micron; 50 C; 60 C; GaInAsP; MOCVD; ethyldimethylindium; gain guided stripe lasers; life testing; negligible degradation; reliability; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900831
