Title :
MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators
Author :
Scheiber, Helmut ; Lübke, Kurt ; Grützmacher, D. ; Diskus, Christian G. ; Thim, Hartwig W.
Author_Institution :
Inst. fuer Mikroelektronik, Linz Univ., Austria
fDate :
12/1/1989 12:00:00 AM
Abstract :
A MIMIC-(millimeter wave monolithic integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW)
Keywords :
Gunn oscillators; III-V semiconductors; MMIC; field effect devices; gallium arsenide; indium compounds; negative resistance; 29 GHz; 30 to 56 mW; 34 GHz; EHF; GaAs; III-V semiconductors; InP; MESFET channel; MIMIC-compatible; MM-wave IC; TED oscillator; device structure; field effect controlled TED; frequency-independent negative resistance; microwave oscillator; millimeter wave monolithic integrated circuit; simulation; stationary charge dipole domain; transferred electron oscillator; Doping; Electrons; FETs; Frequency; Gallium arsenide; Indium phosphide; Millimeter wave integrated circuits; Millimeter wave radar; Oscillators; Power generation;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
