Title :
Comment: Dark noise of Ga0.47In0.53As photoconductive detectors
Author_Institution :
PlessCor Optronics Inc., Chatsworth, USA
Keywords :
III-V semiconductors; electron device noise; gallium arsenide; indium compounds; photoconducting devices; photodetectors; Ga0.47In0.53As photoconductive detectors; dark noise; receiver sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860275