DocumentCode
1021948
Title
Reply: Dark noise of Ga0.47In0.53As photoconductive detectors
Author
Antreasyan, A.
Author_Institution
AT&T Bell Laboratories, Murray Hill, USA
Volume
22
Issue
8
fYear
1986
Firstpage
406
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; tunnel diodes; Al0.3Ga0.7As/GaAs/Al0.3Ga 0.7As double-barrier diode; bias direction; first excited level; negative differential resistance; resonant tunnelling;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860276
Filename
4256469
Link To Document