Title :
Reply: Dark noise of Ga0.47In0.53As photoconductive detectors
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; tunnel diodes; Al0.3Ga0.7As/GaAs/Al0.3Ga 0.7As double-barrier diode; bias direction; first excited level; negative differential resistance; resonant tunnelling;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860276
