Title :
Infra-red electroluminescence from CdxHg1-xTe diodes
Author_Institution :
RSRE, Malvern, UK
Abstract :
Room-temperature infra-red emission (λ ˜ 3 μm) is reported for the first time from forward-biased p-n junctions in CdxHg1-xTe (x ˜ 0.3). Efficiencies are as high as 0.2% and the spectrum width is 0.3 μm. A simple RF-modulated communications link has been demonstrated using both source and detector at room temperature.
Keywords :
II-VI semiconductors; cadmium compounds; electroluminescence; light emitting diodes; mercury compounds; optical links; CdxHg1-xTe diodes; IR LED; IR electroluminescence; RF-modulated communications link; forward-biased p- n junctions; quantum efficiency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860284
