• DocumentCode
    1022033
  • Title

    Infra-red electroluminescence from CdxHg1-xTe diodes

  • Author

    Tarry, H.A.

  • Author_Institution
    RSRE, Malvern, UK
  • Volume
    22
  • Issue
    8
  • fYear
    1986
  • Firstpage
    416
  • Lastpage
    418
  • Abstract
    Room-temperature infra-red emission (λ ˜ 3 μm) is reported for the first time from forward-biased p-n junctions in CdxHg1-xTe (x ˜ 0.3). Efficiencies are as high as 0.2% and the spectrum width is 0.3 μm. A simple RF-modulated communications link has been demonstrated using both source and detector at room temperature.
  • Keywords
    II-VI semiconductors; cadmium compounds; electroluminescence; light emitting diodes; mercury compounds; optical links; CdxHg1-xTe diodes; IR LED; IR electroluminescence; RF-modulated communications link; forward-biased p- n junctions; quantum efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860284
  • Filename
    4256477