DocumentCode
1022033
Title
Infra-red electroluminescence from CdxHg1-xTe diodes
Author
Tarry, H.A.
Author_Institution
RSRE, Malvern, UK
Volume
22
Issue
8
fYear
1986
Firstpage
416
Lastpage
418
Abstract
Room-temperature infra-red emission (λ ˜ 3 μm) is reported for the first time from forward-biased p-n junctions in CdxHg1-xTe (x ˜ 0.3). Efficiencies are as high as 0.2% and the spectrum width is 0.3 μm. A simple RF-modulated communications link has been demonstrated using both source and detector at room temperature.
Keywords
II-VI semiconductors; cadmium compounds; electroluminescence; light emitting diodes; mercury compounds; optical links; CdxHg1-xTe diodes; IR LED; IR electroluminescence; RF-modulated communications link; forward-biased p- n junctions; quantum efficiency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860284
Filename
4256477
Link To Document