Title :
AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy
Author :
Sullivan, G.J. ; Asbeck, P.M. ; Chang, M.F. ; Miller, Douglas L. ; Wang, K.C.
Author_Institution :
Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.
Keywords :
III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors; I-V characteristics; In content; misfit dislocations; molecular beam epitaxy; semiconductor growth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860286
