• DocumentCode
    1022053
  • Title

    AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors by molecular beam epitaxy

  • Author

    Sullivan, G.J. ; Asbeck, P.M. ; Chang, M.F. ; Miller, Douglas L. ; Wang, K.C.

  • Author_Institution
    Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA
  • Volume
    22
  • Issue
    8
  • fYear
    1986
  • Firstpage
    419
  • Lastpage
    421
  • Abstract
    The growth and characteristics of the first AlGaAs/InGaAs/GaAs HBTs are reported. Layers with up to 10% indium content appeared to be free of misfit dislocations, and resulted in HBTs with good I/V characteristics which scaled with In content according to theory.
  • Keywords
    III-V semiconductors; aluminium compounds; bipolar transistors; gallium arsenide; indium compounds; molecular beam epitaxial growth; semiconductor growth; AlGaAs/InGaAs/GaAs strained-layer heterojunction bipolar transistors; I-V characteristics; In content; misfit dislocations; molecular beam epitaxy; semiconductor growth;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860286
  • Filename
    4256479
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022053