DocumentCode
1022179
Title
Avalanche GaAlAs/GaAs heterojunction phototransistor with optoelectronic bistability
Author
Huang Xiaokang ; Wang Zuning ; Sun Baoyin
Author_Institution
Tsinghua University, Department of Radio Electronics, Beijing, China
Volume
22
Issue
8
fYear
1986
Firstpage
435
Lastpage
436
Abstract
Optoelectronic bistability in an avalanche GaAlAs/GaAs HPT which operates in the negative resistance region is reported for the first time. Theoretical and experimental results are presented. This device can be used in regulation, differential amplification and optical memory signals.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; negative resistance; optical bistability; phototransistors; GaAlAs-GaAs avalanche heterojunction phototransistor; differential amplification; negative resistance region; optical memory signals; optoelectronic bistability; regulation;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19860297
Filename
4256490
Link To Document