Characterisation of frequency response of 1.5 μm InGaAsP DFB laser diode and InGaAs PIN photodiode by heterodyne measurement technique

Author

Schimpe, R. ; Bowers, J.E. ; Koch, T.L.

Author_Institution

AT&T Bell Laboratories, Holmdel, USA

Volume

22

Issue

9

fYear

1986

Firstpage

453

Lastpage

454

Abstract

The frequency response of an InGaAs PIN photodiode and the ratio of the frequency modulation (FM) index to the intensity modulation (IM) index of a 1.5 μm InGaAsP vapour-phase-transported DFB laser diode have been measured by an optical heterodyne measurement technique. From the response of the photodiode to the laser radiation beat frequency, a 20 GHz detector bandwidth is determined. The ratio of the FM and IM indices at 3 mW laser output power per facet decreases from 60 at 100 MHz modulation frequency to 3.3 above 2 GHz.

Keywords

III-V semiconductors; characteristics measurement; demodulation; distributed feedback lasers; frequency modulation; gallium arsenide; indium compounds; infrared detectors; optical modulation; photodiodes; semiconductor device testing; semiconductor junction lasers; spectral analysis; 20 GHz detector bandwidth; 3 mW laser output power per facet; FM index intensity modulation index ratio; InGaAs PIN photodiode; InGaAsP DFB laser diode; InGaAsP vapour-phase-transported DFB laser diode; frequency modulation; frequency response; intensity modulation; laser radiation beat frequency; laser wavelength 1.5 micron; microwave modulation; modulation frequency range 100 MHz to 2 GHz; optical heterodyne measurement technique; semiconductors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19860308

Filename

4256502