1.54 mu m electroluminescence in MeV ion implanted Er-doped GaAs

Er³⁺ electroluminescence at 1.54 mu m has been observed from p-n junction diodes fabricated from approximately=1 mu m Er doped GaAs layers produced by high energy ion implantation. These unique junctions are formed directly by the p-type conversion of the n-type substrate material within the implantation profile. The low efficiencies observed in these devices ( eta approximately=10^-6) are believed to be related to the small fraction of the implanted Er in the Er³⁺ state.