Title :
High-power and high-efficiency phased array lasers grown by a two-step metalorganic chemical vapour deposition
Author :
Welch, D.F. ; Cross, P.S. ; Scifres, D.R. ; Harnagel, G. ; Cardinal, M. ; Streifer, W. ; Burnham, R.D.
Author_Institution :
Spectra Diode Laboratories, San Jose, USA
Abstract :
Phased array lasers which emit 1.3 W CW output were fabricated using a two-step metalorganic chemical vapour deposition process were developed. The differential efliciency at 100 mW is 78% and the total efficiency at the catastrophic limit is 39%.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; 1.3 W CW output; GaAs/GaAlAs lasers; MOCVD; catastrophic limit; differential efficiency; efficiency; high power phased array lasers; high-efficiency; semiconductors; two-step metalorganic chemical vapour deposition;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860316
