Title :
Planar VPE infill 1.3 μm integrated laser/monitor photodiode with CARIBE etched facets
Author :
Williams, P.J. ; Webb, A.P. ; Goodridge, I.H. ; Carter, A.C.
Author_Institution :
Plessey Research (Caswell Limited, Allen Clark Research Centre, Towcester, UK
Abstract :
We report the preparation of a novel, planar VPE infill 1.3 μm laser featuring an integrated monitor photodiode. The rear laser and front photodiode facets were formed by chemically assisted reactive ion beam etching (CARIBE). Threshold currents were as low as 17 mA with efficiencies up to 17% per facet. The laser/monitor photodiode sensitivity was ˜5 μA/mW.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; photodiodes; semiconductor junction lasers; sputter etching; vapour phase epitaxial growth; CARIBE etched facets; chemically assisted reactive ion beam etching; efficiencies; integrated laser/monitor photodiode; integrated monitor photodiode; planar VPE infill; preparation; sensitivity; threshold currents; wavelength 1.3 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860321
