DocumentCode :
1022446
Title :
A critique of the theory of p-n-p-n devices
Author :
Gibbons, James F.
Author_Institution :
Stanford University, Stanford, Calif.
Volume :
11
Issue :
9
fYear :
1964
fDate :
9/1/1964 12:00:00 AM
Firstpage :
406
Lastpage :
413
Abstract :
A review of various papers dealing with p-n-p-n device characteristics shows essentially different interpretations of 1) the condition for switching and 2) the operating state defined by 
. The present paper attempts to show the relationship between these various papers and to clarify the conditions which exist at the switching point and holding point.
. The present paper attempts to show the relationship between these various papers and to clarify the conditions which exist at the switching point and holding point.Keywords :
Charge carrier processes; Current density; Diodes; Equations; Frequency; P-n junctions; Physics; Transistors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1964.15352
Filename :
1473740
Link To Document :
