An MMIC-compatible tightly coupled line structure using embedded microstrip

Author

Willems, David ; Bahl, Inder

Author_Institution

ITT, Fort Wayne, IN, USA

Volume

41

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2303

Lastpage

2310

Abstract

The authors present a highly manufacturable coupled line structure for MMICs (monolithic microwave integrated circuits) which uses embedded microstrip to achieve tight coupling and only uses the process steps necessary to make MIM (metal-insulator-metal) capacitors. Passive circuits demonstrated using this technique include a single-section 5-21-GHz broadband 3-dB coupler and a 6-15-GHz 90° Schiffman section. The coupler and the Schiffman section use tight (2-dB) to extremely tight (0.7-dB) coupling factors, respectively. This is the first time that a coupler has achieved such a wide bandwidth on a 125-μm-thick GaAs substrate

Keywords

MMIC; gallium arsenide; metal-insulator-metal devices; microstrip lines; waveguide couplers; 125 mum; 2 to 7 GHz; 5 to 21 GHz; 6 to 15 GHz; 75 mum; GaAs; GaAs substrate; MIM capacitors; MMIC; Schiffman section; coupled line structure; embedded microstrip; insertion phase difference; passive circuits; quadrature couplers; single-section broadband 3-dB coupler; tight coupling; wide bandwidth; Coupling circuits; Integrated circuit manufacture; MIM capacitors; MMICs; Manufacturing processes; Metal-insulator structures; Microstrip; Microwave integrated circuits; Monolithic integrated circuits; Passive circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.260721

Filename

260721