12 GHz low-noise MMIC amplifier designed with a noise model that scales with MODFET size and bias

Author

Hughes, Brian ; Perdomo, Julio ; Kondoh, Hiroshi

Author_Institution

Microwave Technol. Div., Hewlett-Packard Co., Santa Rosa, CA, USA

Volume

41

Issue

12

fYear

1993

fDate

12/1/1993 12:00:00 AM

Firstpage

2311

Lastpage

2316

Abstract

A scalable, bias-dependent FET noise model developed for monolithic microwave integrated circuit (MMIC) design is discussed. A three-stage, 12-GHz, MMIC low-noise amplifier (LNA) designed with the model is described. The LNA has a 1.6-dB noise figure and 25.6-dB gain. Lumped elements were used to design an LNA that was significantly smaller per stage (0.31 mm²) than previous MMIC LNAs

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; semiconductor device models; semiconductor device noise; 1.6 dB; 12 GHz; 25.6 dB; MMIC low-noise amplifier design; MODFET bias; MODFET size; Smith chart; bias-dependent FET noise model; lumped elements; noise model; scalable model; three-stage LNA; FET integrated circuits; Integrated circuit modeling; Integrated circuit noise; Low-noise amplifiers; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.260722

Filename

260722