Title :
Dry etching characteristics of LiNbO3
Author :
Chung, Pil Seung ; Horwitz, C.M. ; Guo, W.L.
Author_Institution :
Chinese University of Hong Kong, Deportment of Electronics, Shatin, Hong Kong
Abstract :
We report a high etch selectivity of LiNbO3 with respect to Cr of 10:1 using the planar sputter etching technique in CF4 plasma. The etch rate can be further increased by an order of magnitude using an enhanced-discharge hollow-cathode sputter etching system.
Keywords :
lithium compounds; optical materials; optical workshop techniques; sputter etching; Al mask; CF4 plasma; Cr mask; LiNbO3; dry etching characteristics; enhanced-discharge etching system; high etch selectivity; hollow-cathode; integrated optics; optical workshop techniques; planar sputter etching technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860329
