Title :
A broadband, planar, doubly balanced monolithic Ka-band diode mixer
Author :
Maas, Stephen A. ; Chang, Kwo Wei
Author_Institution :
Nonlinear Consulting, Long Beach, CA, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
A planar monolithic diode mixer that achieves 5-10-dB conversion loss and very low distortion and spurious responses over a 26-40-GHz RF and local oscillator (LO) bandwidth and DC-12-GHz IF is described. Two types of diodes have been used: the first used the gate-to-channel junctions of 0.2-μm×80-μm InGaAs HEMTs; and the second used Schottky diodes realized in HBT technology. The baluns are Marchand-like coplanar structures
Keywords :
MMIC; Schottky-barrier diodes; heterojunction bipolar transistors; high electron mobility transistors; mixers (circuits); 0 to 40 GHz; 12 GHz; 14 GHz; 5 to 10 dB; HBT technology; HEMT diodes; InGaAs; Ka-band; Marchand-like coplanar structures; Schottky diodes; baluns; broadband type; doubly balanced mixer; gate-to-channel junctions; planar monolithic diode mixer; Bandwidth; Heterojunction bipolar transistors; Impedance matching; Indium gallium arsenide; Inductance; Inductors; Passband; Radio frequency; Resonance; Schottky diodes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
