Title :
High efficiency (1.2 mW/mA) top-surface-emitting GaAs quantum well lasers
Author :
Lee, Y.H. ; Tell, B. ; Brown-Goebeler, K. ; Jewell, J.L. ; Leibenguth, R.E. ; Asom, M.T. ; Livescu, Gabriela ; Luther, L. ; Mattera, V.D.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Highly efficient (1.2 mW/mA, >70% CW differential quantum efficiency), top-surface-emitting, vertical cavity lasers are achieved at room temperature. Buried damage layers by proton implantation are used for efficient current funnelling. The CW threshold currents are 3.5-8.0 mA, at 3.7-4.2 V bias, for 10-30 mu m diameter lasers. The lasing wavelengths are 845-848 nm.
Keywords :
III-V semiconductors; gallium arsenide; semiconductor junction lasers; semiconductor quantum wells; 10 to 30 micron; 3.5 to 8 mA; 3.7 to 4.2 V; 70 percent; 845 to 848 nm; CW operation; CW threshold currents; GaAs quantum well lasers; current funnelling; diameter; high efficiency lasers; lasing wavelengths; proton implantation; room temperature; semiconductors; top-surface-emitting; vertical cavity lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900841
