Title :
A D-band monolithic fundamental oscillator using InP-based HEMT´s
Author :
Kwon, Youngwoo ; Pavlidis, Dimitris ; Brock, Timothy L. ; Streit, Dwight C.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
fDate :
12/1/1993 12:00:00 AM
Abstract :
The design, analysis and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1-μm pseudomorphic double heterojunction InAlAs/In0.7Ga0.3As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured, and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 μm). This represents the highest frequency of fundamental signal generation out of monolithic chips using three-terminal devices
Keywords :
III-V semiconductors; MMIC; equivalent circuits; feedback; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave oscillators; network analysis; network synthesis; 0.1 micron; 130.7 GHz; D-band; HEMT oscillator; InAlAs-In0.7Ga0.3As-InP; InP-based HEMTs; dual feedback topology; high-electron-mobility transistor; integrated E-field probe; monolithic fundamental oscillator; onchip bias circuitry; pseudomorphic double heterojunction HEMTs; Circuit topology; Feedback circuits; Frequency; HEMTs; Heterojunctions; Indium compounds; MODFETs; Oscillators; Power measurement; Probes;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
