• DocumentCode
    1022537
  • Title

    Low-noise microwave HIFET fabricated using photolithography and MOCVD

  • Author

    Tanaka, Kiyoshi ; Takakuwa, H. ; Nakamura, F. ; Mori, Yojiro ; Kato, Yu

  • Author_Institution
    Sony Corporation, Semiconductor Group, Atsugi, Japan
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • Firstpage
    487
  • Lastpage
    488
  • Abstract
    Low-noise HIFETs with AlGaAs/GaAs heterostructures have been developed using MOCVD and optical photolithography. HIFETs with less than 0.5 ¿m-long and 200 ¿m wide gates show a noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz, and a DC tranconductance of 280 mS/mm
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; photolithography; solid-state microwave devices; vapour phase epitaxial growth; 12 GHz; AlGaAs/GaAs heterostructures; HEMT; HIFET; III-V semiconductors; MOCVD; MODFET; SHF; TEGFET; VPE; epitaxial growth; fabrication; heterointerface FET; high-electron mobility transistors; low-noise operation; metalorganic CVD; photolithography; solid-state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860331
  • Filename
    4256525
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022537