Title :
Low-noise microwave HIFET fabricated using photolithography and MOCVD
Author :
Tanaka, Kiyoshi ; Takakuwa, H. ; Nakamura, F. ; Mori, Yojiro ; Kato, Yu
Author_Institution :
Sony Corporation, Semiconductor Group, Atsugi, Japan
Abstract :
Low-noise HIFETs with AlGaAs/GaAs heterostructures have been developed using MOCVD and optical photolithography. HIFETs with less than 0.5 ¿m-long and 200 ¿m wide gates show a noise figure of 0.87 dB with an associated gain of 12.5 dB at 12 GHz, and a DC tranconductance of 280 mS/mm
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; photolithography; solid-state microwave devices; vapour phase epitaxial growth; 12 GHz; AlGaAs/GaAs heterostructures; HEMT; HIFET; III-V semiconductors; MOCVD; MODFET; SHF; TEGFET; VPE; epitaxial growth; fabrication; heterointerface FET; high-electron mobility transistors; low-noise operation; metalorganic CVD; photolithography; solid-state microwave devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860331
