• DocumentCode
    1022555
  • Title

    Role of satellite valleys in ionisation rate enhancement in multiple quantum well avalanche photodiodes

  • Author

    Allam, J. ; Adams, A.R.

  • Volume
    26
  • Issue
    16
  • fYear
    1990
  • Firstpage
    1311
  • Lastpage
    1313
  • Abstract
    The enhancement of the electron ionisation rate in multiple quantum well avalanche photodiodes is determined by the band offsets in the satellite valleys rather than the Gamma valley as previously assumed for semiconductors where the threshold field for the Gunn effect is less than that for impact ionisation. Monte Carlo calculations in a model GaAs/Al0.45Ga0.55As heterostructure show no enhancement caused by the band offsets.
  • Keywords
    III-V semiconductors; Monte Carlo methods; aluminium compounds; avalanche photodiodes; gallium arsenide; semiconductor quantum wells; APD; GaAs-Al 0.45Ga 0.55As; Gunn effect threshold field; Monte Carlo calculations; band offsets; electron ionisation rate; impact ionisation threshold field; ionisation rate enhancement; multiple quantum well avalanche photodiodes; satellite valleys role; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900843
  • Filename
    130953
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022555