• DocumentCode
    1022580
  • Title

    As- and Ga-implanted silicon camel diodes

  • Author

    Vescan, L. ; Splettst¿¿¿?er, J. ; Beneking, H.

  • Author_Institution
    Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
  • Volume
    22
  • Issue
    9
  • fYear
    1986
  • Firstpage
    493
  • Lastpage
    494
  • Abstract
    The fabrication of Si-camel diodes using low-energy implantation of As and Ga into preamorphised substrates is described. By changing the Ga ion energy between 24 and 33 keV, it was possible to vary the barrier height of the diodes in the range 0.33 eV to 0.63 eV.
  • Keywords
    arsenic; elemental semiconductors; gallium; ion implantation; semiconductor diodes; semiconductor doping; 0.33 eV to 0.63 eV; 24 to 33 keV; As; Ga ion energy; Si; Si:Ga,As; barrier height; camel diodes; elemental semiconductor; fabrication; low-energy implantation; preamorphised substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860335
  • Filename
    4256529
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022580