Title :
As- and Ga-implanted silicon camel diodes
Author :
Vescan, L. ; Splettst¿¿¿?er, J. ; Beneking, H.
Author_Institution :
Technical University of Aachen, Institute of Semiconductor Electronics, Aachen, West Germany
Abstract :
The fabrication of Si-camel diodes using low-energy implantation of As and Ga into preamorphised substrates is described. By changing the Ga ion energy between 24 and 33 keV, it was possible to vary the barrier height of the diodes in the range 0.33 eV to 0.63 eV.
Keywords :
arsenic; elemental semiconductors; gallium; ion implantation; semiconductor diodes; semiconductor doping; 0.33 eV to 0.63 eV; 24 to 33 keV; As; Ga ion energy; Si; Si:Ga,As; barrier height; camel diodes; elemental semiconductor; fabrication; low-energy implantation; preamorphised substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860335
