An improved model for noise characterization of microwave GaAs FETs

Author

Froelich, Robert K.

Author_Institution

Watkins-Johnson Co., Palo Alto, CA, USA

Volume

38

Issue

6

fYear

1990

fDate

6/1/1990 12:00:00 AM

Firstpage

703

Lastpage

706

Abstract

A broadband noise model for microwave FETs has been described. The model consists of small-signal lumped elements together with two noise sources. A measurement of broadband S parameters plus a single-frequency measurement of optimum source susceptance can yield enough information to determine the model, although greater accuracy is obtained using additional noise data to determine the precise value of the gate resistance. The model´s predictions match well with measured noise parameter data for a high-performance GaAs FET over a wide frequency range

Keywords

III-V semiconductors; S-parameters; electron device noise; field effect transistors; gallium arsenide; solid-state microwave devices; GaAs; broadband S parameters; broadband noise model; gate resistance; microwave FETs; noise characterization; noise data; noise sources; optimum source susceptance; single-frequency measurement; small-signal lumped elements; Frequency; Gallium arsenide; Integrated circuit noise; Microwave FETs; Microwave measurements; Noise generators; Noise measurement; Predictive models; Semiconductor device modeling; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.130963

Filename

130963