DocumentCode :
1022655
Title :
Forward transient behavior of P-N junction diodes at high injection levels
Author :
Kano, K. ; Reich, H.J.
Author_Institution :
American University of Beirut, Beirut, Lebanon
Volume :
11
Issue :
11
fYear :
1964
fDate :
11/1/1964 12:00:00 AM
Firstpage :
515
Lastpage :
523
Abstract :
By use of the finite-difference method of numerical analysis, a detailed numerical solution is obtained for the complete one-dimensional continuity equation, to study the transient and steady-state behavior of p-n junction diodes at moderate-to-high injection levels. The solution of the continuity equation is obtained for minority carriers in the base of a diode under the influence of drift, diffusion, and recombination. From the calculated distribution of minority carriers in the base, minority-carrier and majority-carrier currents and their components are obtained. The electric field and its components in the base are determined, and the total voltage across the diode and its components are calculated. All results are obtained for transient and steady-state conditions. The effect of variations of certain physical parameters on the diode behavior is investigated. All calculations were performed on the IBM 709 digital computer.
Keywords :
Charge carrier processes; Current density; Electron mobility; Equations; Finite difference methods; Numerical analysis; P-n junctions; Semiconductor diodes; Steady-state; Transient analysis;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1964.15374
Filename :
1473762
Link To Document :
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