Title :
Monolithic FET structures for high-power control component applications
Author :
Shifrin, Mitchell B. ; Katzin, Peter J. ; Ayasli, Yalcin
Author_Institution :
Hittite Microwave Corp., Woburn, MA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
A monolithic FET switch is described that can be integrated with other monolithic functions or used as a discrete component in a microwave integrated circuit structure. This device increases the power-handling capability of the conventional single FET switch by an order of magnitude. It does this by overcoming the breakdown voltage limitation of the FET device. The design, fabrication and performance of two high-power control components using these circuits are described as examples of the implementation of this technology. They are an L-band terminated single-pole, single-throw (SPST) switch and an L-band limiter
Keywords :
MMIC; power integrated circuits; semiconductor switches; L; L-band; MMIC; SPST switch; bias network; breakdown voltage limitation; fabrication; high-power control component; limiter; microwave integrated circuit structure; monolithic FET switch; power-handling capability; single-pole; single-throw; terminated switch; FET integrated circuits; Fabrication; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave devices; Microwave integrated circuits; Monolithic integrated circuits; Switches; Switching circuits;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
