A monolithic 60 GHz diode mixer and IF amplifier in compatible technology

Author

Adelseck, Bernd ; Colquhoun, Alexander ; Dieudonné, Jean-Marie ; Ebert, Günther ; Schmegner, Karl-Ernst ; Schwab, Wolfgang ; Selders, Johannes

Author_Institution

Telefunken Systemtech., Ulm, West Germany

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2142

Lastpage

2147

Abstract

A technology is described which allows the monolithic integration of millimeter-wave Schottky diodes and MESFETs on one chip. The Schottky diodes have a cutoff frequency f_T of 2300 GHz. A monolithic 60-GHz mixer chip using these diodes shows a conversion loss of 6 dB and a noise figure (DSB) of 3.3 dB. The MESFETs have an f _max up to 70 GHz. A two-stage IF amplifier realized with this technology shows a gain of 20.6 dB and a noise figure of 1.7 dB at 4 GHz

Keywords

MMIC; Schottky gate field effect transistors; Schottky-barrier diodes; intermediate-frequency amplifiers; microwave amplifiers; mixers (circuits); 1.7 dB; 20.6 dB; 3.3 dB; 6 dB; 60 GHz; EHF; IF amplifier; MESFETs; MIMIC; MM-wave circuits; compatible technology; conversion loss; diode mixer; millimeter-wave Schottky diodes; monolithic integration; Circuits; Fabrication; Frequency; Gallium arsenide; MESFETs; MMICs; Millimeter wave technology; Noise figure; Rapid thermal annealing; Schottky diodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44133

Filename

44133