C-band 10 W MMIC class-A amplifier manufactured using the refractory SAG process

Author

Bahl, Inder J. ; Wang, Robert ; Geissberger, Arthur E. ; Griffin, Edward L. ; Andricos, Constantine

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

Volume

37

Issue

12

fYear

1989

fDate

12/1/1989 12:00:00 AM

Firstpage

2154

Lastpage

2158

Abstract

The authors describe the design, fabrication, and test results of a C-band single-chip GaAs monolithic microwave integrated circuit (MMIC) class-A amplifier manufactured using a multifunctional self-aligned gate (MSAG) process. The amplifier demonstrates a 10-W power output (0.625 W/mm power density) at 5.5 GHz with an associated gain of 5 dB and a power-added efficiency of 36%. The average functional yield of the IC is above 70%. This excellent performance is attributed to an accurate model for 4-mm FETs, the IC design method used, simple circuit topology, and high-yield, high-performance MSAG processing

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; microwave amplifiers; 10 W; 36 percent; 5.5 GHz; C-band; GaAs; IC design method; III-V semiconductors; MMIC; SHF; class-A amplifier; fabrication; monolithic microwave integrated circuit; multifunctional self-aligned gate; power-added efficiency; refractory SAG process; Automatic testing; Circuit testing; Fabrication; Gallium arsenide; Integrated circuit modeling; Integrated circuit testing; MMICs; Microwave amplifiers; Microwave integrated circuits; Monolithic integrated circuits;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.44135

Filename

44135