DocumentCode
1022721
Title
Monolithic 2-18 GHz matrix amplifiers
Author
Chang, A.P. ; Niclas, K.B. ; Cantos, B.D. ; Strifler, W.A.
Author_Institution
Watkins-Johnson Co., Palo Alto, CA, USA
Volume
37
Issue
12
fYear
1989
fDate
12/1/1989 12:00:00 AM
Firstpage
2159
Lastpage
2162
Abstract
The design and performance of two different monolithic 2-18-GHz matrix amplifiers are discussed. The first module, optimized for gain and return loss, yields gains of G =15.5±0.9 dB and a maximum return loss of RL =-12.0 dB. When these modules are cascaded to form a two- or three-stage amplifier, gains of G =31.4±1.4 dB and G =43.2±1.8 dB, respectively, are measured. For the second unit, designed for low noise and gain, noise figures of NF =4.15±0.85 dB and gains of G =17.1±1.25 dB are achieved
Keywords
MMIC; Schottky gate field effect transistors; field effect integrated circuits; microwave amplifiers; 15.5 to 43.2 dB; 2 to 18 GHz; 4.15 dB; MESFET circuits; MMIC; SHF; matrix amplifiers; monolithic microwave IC; return loss; three-stage amplifier; two-stage amplifiers; Circuit noise; Distributed parameter circuits; Gain measurement; MESFETs; Noise figure; Noise measurement; Power transmission lines; Resistors; Substrates; Transmission line matrix methods;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.44136
Filename
44136
Link To Document