Title :
The effect of oxide traps on the performance of MOS devices
Author :
Heiman, F.P. ; Warfield, G.
fDate :
11/1/1964 12:00:00 AM
Keywords :
Capacitance; Charge carrier lifetime; Frequency response; Laboratories; MOS devices;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/T-ED.1964.15380
