DocumentCode

1022725

Title

The effect of oxide traps on the performance of MOS devices

Author

Heiman, F.P. ; Warfield, G.

Volume

11

Issue

11

fYear

1964

fDate

11/1/1964 12:00:00 AM

Firstpage

530

Lastpage

530

Keywords

Capacitance; Charge carrier lifetime; Frequency response; Laboratories; MOS devices;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/T-ED.1964.15380

Filename

1473768