Title :
Evaluation of current density distribution in MESFET gates
Author :
Scorzoni, A. ; Canali, Carlo ; Fantini, F. ; Zanoni, Enrico
Author_Institution :
UniversitÃ\xa0 di Bologna, Dipartimento di Elettronica, Informatica e Sistemistica, Bologna, Italy
Abstract :
An analytical evaluation of the distribution of the current density both along the gate finger and perpendicular to the metal/semiconductor interface in MESFET transistors is reported for the case of forward-biased gate junctions. Examples are given for two gate resistances per unit length to evidence the current crowding effect which appears near the gate pad on increasing the gate resistance.
Keywords :
Schottky gate field effect transistors; current density; MESFET gates; current crowding effect; current density; forward-biased gate junctions; gate finger; gate resistances;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19860349
