• DocumentCode
    1022728
  • Title

    Evaluation of current density distribution in MESFET gates

  • Author

    Scorzoni, A. ; Canali, Carlo ; Fantini, F. ; Zanoni, Enrico

  • Author_Institution
    UniversitÃ\xa0 di Bologna, Dipartimento di Elettronica, Informatica e Sistemistica, Bologna, Italy
  • Volume
    22
  • Issue
    10
  • fYear
    1986
  • Firstpage
    512
  • Lastpage
    514
  • Abstract
    An analytical evaluation of the distribution of the current density both along the gate finger and perpendicular to the metal/semiconductor interface in MESFET transistors is reported for the case of forward-biased gate junctions. Examples are given for two gate resistances per unit length to evidence the current crowding effect which appears near the gate pad on increasing the gate resistance.
  • Keywords
    Schottky gate field effect transistors; current density; MESFET gates; current crowding effect; current density; forward-biased gate junctions; gate finger; gate resistances;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19860349
  • Filename
    4256544
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1022728