Title :
Sensitivity of a 40 GHz HEMT low-noise amplifier to material and processing variations
Author :
Yuen, C. ; Nishimoto, C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fDate :
12/1/1989 12:00:00 AM
Abstract :
The design of a monolithic, single-stage low-noise amplifier at 40 GHz for application to satellite communication is presented. The amplifier includes a single 0.25-μm-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of 8 dB and a noise figure of 4 dB were measured from 36 to 42 GHz for an amplifier with a mushroom gate profile. Using a triangular-gate-profile device with a lower gate-to-drain feedback capacitance, the amplifier achieves a 10 dB peak gain at 43 GHz. The chip size is 1.1×1.1 mm2
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; satellite relay systems; 0.25 micron; 36 to 43 GHz; 4 dB; 8 to 10 dB; EHF; HEMT; LNA; MM-wave type; MMIC; biasing circuits; low-noise amplifier; material variations; monolithic microwave IC; mushroom gate profile; on-chip matching; processing variations; satellite communication; sensitivity; single-stage; triangular-gate-profile; Capacitance; Circuits; Feedback; Gain measurement; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Satellite communication; Semiconductor device measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
