Electron mobility within 100 nm of the Si/sapphire interface in double-solid-phase epitaxially regrown SOS

Field-effect electron mobility within 100 nm of the sapphire substrate in double-solid-phase epitaxially regrown silicon on sapphire has been measured. Electron mobility in the range of 500 cm2/Vs has been observed in this near-interfacial region, consistent with previously reported reductions in the crystal defect concentration.