DocumentCode :
1022949
Title :
Effect of mechanical stress on the electrical characteristics of p-n junction devices
Author :
Hauser, J.R. ; Wortman, J.J.
Volume :
11
Issue :
11
fYear :
1964
fDate :
11/1/1964 12:00:00 AM
Firstpage :
533
Lastpage :
533
Keywords :
Diodes; Electric variables; Electrons; Gallium arsenide; Heterojunctions; P-n junctions; Photonic band gap; Stress; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1964.15403
Filename :
1473791
Link To Document :
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