Title :
Polycrystalline silicon thin-film transistors with two-step annealing process
Author :
Bonnel, M. ; Duhamel, N. ; Haji, L. ; Loisel, B. ; Stoemenos, J.
Author_Institution :
France Telecom, Lannion, France
Abstract :
Thin-film transistors (TFTs) were fabricated from poly-Si crystallized by a two-step annealing process on glass substrates. The combination of low-temperature furnace annealing and high-temperature rapid thermal annealing leads to a significant improvement in the material quality. The TFTs obtained with this two-step annealing material exhibit better measured characteristics than those obtained by using conventional furnace annealing.<>
Keywords :
annealing; elemental semiconductors; insulated gate field effect transistors; rapid thermal processing; silicon; thin film transistors; Si; TFTs; glass substrates; high-temperature RTA; low-temperature furnace annealing; polycrystalline Si; polysilicon; rapid thermal annealing; thin-film transistors; two-step annealing process; Crystalline materials; Crystallization; Furnaces; Glass; Hydrogen; Rapid thermal annealing; Semiconductor films; Silicon; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
