Title :
Metal electromigration damage healing under bidirectional current stress
Author :
Tao, Jiang ; Cheung, Nathan W. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
The AC electromigration lifetime, without DC component, has been studied in a wide frequency range (mHz to 200 MHz) and found to be linearly proportional to the repetition frequency of the AC stressing current. This behavior is observed in both of the metallization systems (Al-2% Si and Cu) investigated. This provides further confirmation that AC lifetime is orders of magnitude longer than DC lifetime and that CMOS signal lines may be called upon to carry much larger current than allowed in present practice.<>
Keywords :
CMOS integrated circuits; circuit reliability; electromigration; integrated circuit testing; life testing; metallisation; AC electromigration lifetime; AC stressing current; AlSi; CMOS signal lines; Cu; bidirectional current stress; electromigration damage healing; metallization systems; repetition frequency; Automatic testing; Current density; Density measurement; Electromigration; Frequency; Integrated circuit interconnections; Integrated circuit reliability; Stress; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
